Fig. 7

Frequency of memory T cells in response to the stimulation of rPocDBP-RII antigen using multiparameter flow cytometry. A The representative gating strategy to identify T naïve cells (T_naïve, CD44^int/low CD62L⁺), T central memory cells (T_CM, CD44^high CD62L⁺), T effector memory cells (T_EM, CD44^high CD62L⁻) and T terminally differentiated cells (T_EMRA, CD44^int/low CD62L⁻). The contour plots above depict CD4⁺ T cells, and the contour plots below show CD8⁺ T cells. Percentage comparison of T_EM (B) and T_CM (C) in CD4⁺ and CD8⁺ T cells after stimulating the splenocytes of rPocDBP-RII‑immunized and PBS‑immunized mice by rPocDBP-RII in vitro